? 2005 ixys all rights reserved v ces = 1700 v i c25 = 38 a v ce(sat) = 3.5 v t fi(typ) = 250 ns ixgr 32n170h1 g = gate, c = collector, e = emitter features z electrically isolated tab z high current handling capability z mos gate turn-on - drive simplicity z rugged npt structure z molding epoxies meet ul 94 v-0 flammability classification applications z capacitor discharge & pulser circuits z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies ds99318(05/05) symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv ces i c = 1ma, v ge = 0 v 1700 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces 100 a v ge = 0 v, note 1 t j = 125 c3ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i t , v ge = 15 v 2.6 3.5 v notes 2, 3 t j = 125 c 3.1 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1700 v v cgr t j = 25 c to 150 c; r ge = 1 m 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c38a i c90 t c = 90 c20a i f90 14 a i cm t c = 25 c, 1 ms 200 a ssoa v ge = 15 v, t vj = 125 c, r g = 5 i cm = 70 a (rbsoa) clamped inductive load @ 0.8 v ces t sc t j = 125 c, v ce = 1200 v; v ge = 15 v, r g = 10 10 s p c t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c f c mounting force with clamp 22...130/5...30 n/lb v isol 50/60 hz, 1 minute 2500 ~v maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight 5g high voltage igbt with diode electrically isolated tab isolated tab e g c isoplus247 (ixgr) e153432 preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 ixgr 32n170h1 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs i c = i t v ce = 10 v, note 2 22 30 s c ies 3670 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 210 pf c res 41 pf q g 155 nc q ge i c = i t v ge = 15 v, v ce = 0.5 v ces 28 nc q gc 52 nc t d(on) 45 ns t ri 38 ns t d(off) 270 500 ns t fi 250 500 ns e off 10.6 20 mj t d(on) 48 ns t ri 42 ns e on 6.0 mj t d(off) 360 ns t fi 560 ns e off 13.6 mj r thjc 0.65 k/w r thck 0.15 k/w inductive load, t j = 125 c i c = i t , v ge = 15 v r g = 2.7 , v ce = 0.8 v ces note 4 inductive load, t j = 25 c i c = i t , v ge = 15 v r g = 2.7 , v ce = 0.8 v ces note 4 notes: 1. device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. pulse test, t 300 s, duty cycle 2 % 3. test current i t = 21 a. 4. switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g . 5. see ixgh32n170 datasheets for additional igbt characteristics. isoplus247 outline reverse diode (fred) characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. v f i f = 20a, v ge = 0 v, note 2 2.85 v t j = 150 c 2.9 v v to for conduction power losses only 2.1 v r fo t j = 150 c40m i rm i f = 20a, v ge = 0 v, v r = 1200 v 23 a -di f /dt = 450 a/ st j = 125 c27 a t rr 230 ns t j = 125 c 400 ns r thjc 1.5 k/w
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